4v drive nch + pch mosfet QS8M11 ? structure ? dimensions (unit : mm) silicon n-channel mosfet/ silicon p-channel mosfet ? features 1) low on-resistance. 2) high power package(tsmt8). 3) low voltage drive(4v drive). ? application switching ? packaging specifications ? inner circuit package taping code tr basic ordering unit (pieces) 3000 QS8M11 ? ? absolute maximum ratings (ta = 25 ? c) tr1 : n-ch tr2 : p-ch drain-source voltage v dss 30 ? 30 v gate-source voltage v gss ? 20 ? 20 v continuous i d ? 3.5 ? 3.0 a pulsed i dp ? 12 ? 12 a continuous i s 1.0 ? 1.0 a pulsed i sp 12 ? 12 a w / total w / element channel temperature tch ? c range of storage temperature tstg ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 mounted on a ceramic board. power dissipation p d symbol type source current (body diode) drain current parameter 1.5 ? 55 to +150 unit limits 1.25 150 tsmt8 (8) (7) (5)(6) (1) (2) (4)(3) abbreviated symbol : m11 *1 *2 *1 ?2 ?1 (8) (7) (1) (2) ?2 ?1 (6) (5) (3) (4) ?1 esd protection diode ?2 body diode (1) tr1 source (2) tr1 gate (3) tr2 source (4) tr2 gatey (5) tr2 drain (6) tr2 drain (7) tr1 drain (8) tr1 drain 1/8 2011.02 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
QS8M11 ? electrical characteristics (ta = 25 q c) symbol min. typ. max. unit gate-source leakage i gss -- r 10 p av gs =20v, v ds =0v drain-source breakdown voltage v (br)dss 30 - - v i d =1ma, v gs =0v zero gate voltage drain current i dss --1 p av ds =30v, v gs =0v gate threshold voltage v gs (th) 1.0 - 2.5 v v ds =10v, i d =1ma -3550 i d =3.5a, v gs =10v -4565 i d =3.5a, v gs =4.5v 50 70 i d =3.5a, v gs =4v forward transfer admittance l y fs l 2.2 - - s v ds =10v, i d =3.5a input capacitance c iss - 180 - pf v ds =10v output capacitance c oss - 70 - pf v gs =0v reverse transfer capacitance c rss - 35 - pf f=1mhz turn-on delay time t d(on) - 10 - ns i d =1.7a, v dd 15v rise time t r - 25 - ns v gs =10v turn-off delay time t d(off) - 25 - ns r l =8.8 : fall time t f -7-nsr g =10 : total gate charge q g - 3.5 - nc i d =3.5a, v dd 15v gate-source charge q gs - 1.0 - nc v gs =5v gate-drain charge q gd - 1.0 - nc *pulsed ? body diode characteristics (source-drain) (ta = 25 qc) symbol min. typ. max. unit forward voltage v sd - - 1.2 v i s =3.5a, v gs =0v *pulsed parameter conditions conditions parameter static drain-source on-state resistance r ds (on) m : * * 2/8 2011.02 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
QS8M11 ? electrical characteristics (ta = 25 q c) symbol min. typ. max. unit gate-source leakage i gss -- r 10 p av gs = r 20v, v ds =0v drain-source breakdown voltage v (br)dss 30 - - v i d = 1ma, v gs =0v zero gate voltage drain current i dss - 1 p av ds = 30v, v gs =0v gate threshold voltage v gs (th) 1.0 - 2.5 v v ds = 10v, i d = 1ma -5575 i d = 3a, v gs = 10v - 85 115 i d = 1.5a, v gs = 4.5v - 95 125 i d = 1.5a, v gs = 4.0v forward transfer admittance l y fs l 2.4 - - s v ds = 10v, i d = 3a input capacitance c iss - 480 - pf v ds = 10v output capacitance c oss - 70 - pf v gs =0v reverse transfer capacitance c rss - 70 - pf f=1mhz turn-on delay time t d(on) -7-nsi d = 1.5a, v dd 15v rise time t r - 18 - ns v gs = 10v turn-off delay time t d(off) - 50 - ns r l =10 : fall time t f - 35 - ns r g =10 : total gate charge q g - 5.2 - nc i d = 3a, v dd 15v gate-source charge q gs - 1.6 - nc v gs = 5v gate-drain charge q gd - 1.6 - nc *pulsed ? body diode characteristics (source-drain) (ta = 25 qc) symbol min. typ. max. unit forward voltage v sd -- 1.2 v i s = 3a, v gs =0v *pulsed parameter conditions conditions m : static drain-source on-state resistance r ds (on) parameter * * * * * * * * * * * * * * * * * 3/8 2011.02 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
QS8M11 ? electrical characteristics curves 0 0.5 1 1.5 2 2.5 3 0 0.2 0.4 0.6 0.8 1 v gs = 2.5v t a =25 pulsed v gs = 10v v gs = 4.5v v gs = 4.0v v gs = 2.0v 0.001 0.01 0.1 1 10 0123 v ds = 10v pulsed t a = 125 t a = 75c ta= 25c ta= - 25c 10 100 1000 0.01 0.1 1 10 v gs = 4.0v v gs = 4.5v v gs = 10v t a = 25c pulsed 0.01 0.1 1 10 0 0.5 1 1.5 v gs =0v pulsed 0 0.5 1 1.5 2 2.5 3 3.5 0246810 v gs = 2.0v t a =25 pulsed v gs = 10v v gs = 4.5v v gs = 4.0v v gs = 2.5v 10 100 1000 0.1 1 10 v gs = 10v pulsed 0.1 1 10 0.01 0.1 1 10 v ds = 10v pulsed t a = 125c ta= 75c ta= 25c ta= -25c 10 100 1000 0.1 1 10 v gs = 4.0v pulsed fig.1 typical output characteristics( ) fig.2 typical output characteristics( ) fig.3 typical transfer characteristics fig.4 static drain-source on-state resistance vs. drain current( ) fig.5 static drain-source on-state resistance vs. drain current( ) fig.6 static drain-source on-state resistance vs. drain current( ) fig.7 static drain-source on-state resistance vs. drain current( ) fig.9 reverse drain current vs. sourse-drain voltage fig.8 forward transfer admittance vs. drain current drain current : i d [a] drain-source voltage : v ds [v] drain-source voltage : v ds [v] drain current : i d [a] drain current : i d [a] gate-source voltage : v gs [v] drain-current : i d [a] static drain-source on-state resistance : r ds ( on ) [m : ] drain-current : i d [a] static drain-source on-state resistance : r ds ( on ) [m : ] drain-current : i d [a] static drain-source on-state resistance : r ds ( on ) [m : ] drain-current : i d [a] static drain-source on-state resistance : r ds ( on ) [m : ] forward transfer admittance : |yfs| [s] drain-current : i d [a] source current : is [a] source-drain voltage : v sd [v] t a = 125c ta= 75c ta= 25c ta= - 25c t a = 125c ta= 75c ta= 25c ta= - 25c t a = 125c ta= 75c ta= 25c ta= - 25c 10 100 1000 0.1 1 10 v gs = 4.5v pulsed t a = 125c ta= 75c ta= 25c ta= - 25c 4/8 2011.02 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
QS8M11 0 20 40 60 80 100 0246810 t a =25c pulsed i d = 3.5a i d = 1.75a 0 2 4 6 8 10 0246810 t a =25c v dd = 15v i d = 3.5a r g =10 ? pulsed 10 100 1000 0.01 0.1 1 10 100 c iss c rss t a =25c f=1mhz v gs =0v c oss 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 t a = 25c single pulse : 1unit rth(ch-a)(t) = r(t)rth(ch-a) rth(ch-a) = 100 c/w 1 10 100 1000 10000 0.01 0.1 1 10 t f t d(on) t d(off) t a =25c v dd =15v v gs =10v r g =10 ? pulsed t r fig.10 static drain-source on-state resistance vs. gate source voltage fig.12 dynamic input characteristics fig.13 typical capacitance vs. drain-source voltage fig.11 switching characteristics fig.14 maximum safe operating area fig.15 normalized transient thermal resistance vs. pulse width static drain-source on-state resistance : r ds ( on ) [m ? ] gate-source voltage : v gs [v] switching time : t [ns] drain-current : i d [a] gate-source voltage : v gs [v] total gate charge : qg [nc] drain-source voltage : v ds [v] capacitance : c [pf] drain-source voltage : v ds [v] drain current : i d (a) pulse width : pw ( s ) normarized transient thermal resistance : r (t) 0.01 0.1 1 10 100 0.1 1 10 100 p w = 10ms t a = 25c single pulse : 1unit mounted on a ceramic board dc operation operation in this area is limited by r ds(on) (v gs =10v) p w =100us p w =1ms 5/8 2011.02 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
QS8M11 ? electrical characteristics curves 10 100 1000 0.1 1 10 v gs = ? 4.5v pulsed 0 1 2 3 0 0.2 0.4 0.6 0.8 1 v gs = ? 2.5v 7 d r & 3 x o v h g v gs = ? 3.0v v gs = ? 10v v gs = ? 4.5v v gs = ? 4.0v 0.001 0.01 0.1 1 10 0123 v ds = ? 10v pulsed t a r & 7 d r & 7 d r & 7 d r 10 100 1000 0.1 1 10 v gs = ? 4.0v v gs = ? 4.5v v gs = ? 10v 7 d r & 3 x o v h g 0.01 0.1 1 10 0 0.5 1 1.5 v gs =0v pulsed t a = r & 7 d r & 7 d r & 7 d r & 0 1 2 3 0246810 v gs = ? 2.5v 7 d r & 3 x o v h g v gs = ? 10v v gs = ? 4.5v v gs = ? 4.0v v gs = ? 3.0v 10 100 1000 0.1 1 10 v gs = ? 10v pulsed 0.1 1 10 0.01 0.1 1 10 v ds = ? 10v pulsed t a = ? ? ? ? ? 10 100 1000 0.1 1 10 v gs = ? 4.0v pulsed fig.1 typical output characteristics( ) fig.2 typical output characteristics( ) fig.3 typical transfer characteristics fig.4 static drain-source on-state resistance vs. drain current( ) fig.5 static drain-source on-state resistance vs. drain current( ) fig.6 static drain-source on-state resistance vs. drain current( ) fig.7 static drain-source on-state resistance vs. drain current( ) fig.9 reverse drain current vs. sourse-drain voltage fig.8 forward transfer admittance vs. drain current drain current : ? i d [a] drain-source voltage : ? v ds [v] drain-source voltage : ? v ds [v] drain current : ? i d [a] drain current : ? i d [a] gate-source voltage : ? v gs [v] drain-current : ?? i d [a] static drain-source on-state resistance : r ds ( on ) [m ? ] drain-current : ? i d [a] static drain-source on-state resistance : r ds ( on ) [m ? ] drain-current : ? i d [a] static drain-source on-state resistance : r ds ( on ) [m ? ] drain-current : ? i d [a] static drain-source on-state resistance : r ds ( on ) [m ? ] forward transfer admittance : |yfs| [s] drain-current : ? i d [a] source current : ? i s [a] source-drain voltage : ?? v sd [v] t a = r & 7 d r & 7 d r & 7 d r & t a = r & 7 d r & 7 d r & 7 d r & t a = r & 7 d r & 7 d r & 7 d r & 6/8 2011.02 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
QS8M11 0 20 40 60 80 100 120 140 160 180 200 0 5 10 15 i d = ?? 3.0a i d = ? 1.5a t a =25c pulsed 0 2 4 6 8 10 0246810 t a =25c v dd = -15v i d = -3.0a r g =10 ? pulsed 10 100 1000 10000 0.01 0.1 1 10 100 ciss coss crss t a =25c f=1mhz vgs=0v 0.01 0.1 1 10 100 0.1 1 10 100 p w = 10ms t a = 25c single pulse : 1unit mounted on a ceramic board dc operation operation in this area is limited by r ds(on) (v gs = ? 10v) p w =100us p w =1ms 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 t a = 25c single pulse : 1unit rth(ch-a)(t) = r(t)rth(ch-a) rth(ch-a) = 100 c/w 1 10 100 1000 0.01 0.1 1 10 t f t d(on) t d(off) t a =25c v dd = -15v v gs = -10v r g =10 ? pulsed t r fig.10 static drain-source on-state resistance vs. gate source voltage fig.12 dynamic input characteristics fig.13 typical capacitance vs. drain-source voltage fig.11 switching characteristics fig.14 maximum safe operating area fig.15 normalized transient thermal resistance vs. pulse width static drain-source on-state resistance : r ds ( on ) [m ? ] gate-source voltage : ? v gs [v] switching time : t [ ns ] drain-current : ? i d [a] gate-source voltage : ? v gs [v] total gate charge : qg [nc] drain-source voltage : ? v ds [v] capacitance : c [pf] drain-source voltage : ? v ds [v] drain current : ? i d (a) pulse width : pw(s) normarized transient therma l resistance : r (t) 7/8 2011.02 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
QS8M11 ? measurement circuits ? notice this product might cause chip aging and breakdown under the large electrified environment. please consider to design esd protection circuit. v gs r g v d s d.u.t. i d r l v dd 90% 90% 90 % 10% 10% 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) v g v gs charge q g q gs q gd v gs i g(const.) v d s d.u.t. i d r l v dd fig.1-1 switching time measurement circuit fig.1-2 switching waveforms fig.2-1 gate charge measurement circuit fig.2-2 gate charge waveform v gs r g v ds d.u.t. i d r l v dd 90% 90% 90% 10% 10% 10% 50% 50% pulse width v gs v ds t on t off t r t d(on) t f t d(off) v g v gs charge q g q gs q gd v gs i g(const.) v d s d.u.t. i d r l v dd fig.3-1 switching time measurement circuit fig.3-2 switching waveforms fig.4-1 gate charge measurement circuit fig.4-2 gate charge waveform 8/8 2011.02 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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